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      Analysis  of In-situ, Real Time Thin Films – A Few Examples (Ref: Ellipso Technology) | 
    
    
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            1.  Growth Curve of SiO2 on c-Si  | 
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            | The growth curve of SiO2 in Δ, Ψ  plane(left) and refractive index (right upper) and thickness(right lower) variations  of SiO2 growth appearing on screen in real time. Substrate is c-Si | 
           
        
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            2. Growth Curve of GST  | 
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      Growth curve of GST(Ge2Sb2Te5)  film based on a uniform growth model does not match to that of the real growth curve (left). On the contrary, the  growth curve based on a non-uniform growth model matches quite well (right). | 
    
    
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            3. Growth Curve of ZnS-SiO2, Growth Curve  of ZnS-SiO2/GST/ZnS-SiO2 on c-Si  | 
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            | Growth  Curve of ZnS-SiO2 | 
            Growth  Curve of ZnS-SiO2/ 
              GST/ZnS-SiO2 on c-Si | 
           
        
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      One can verify that ZnS-SiO2 film grows  quite uniformly as the evolution curve based on 3-plase model shows quite an  excellent match with the measured ellipsometric growth curve(left). The growth curve of  multiple layers (ZnS-SiO2/GST/ZnS-SiO2) matches the  measured one quite well also(right). | 
    
    
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            4. Phase Changes of GST : Crystallization  and Melting  | 
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            The variation of ellipsometric constant α(Alpha) of GST  as temperature  is increased monotonically, shows phase change process of  GST clearly. The crystallization temperature is 161.0 °C, and the melting temperature is 607 °C. | 
           
        
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            5. Cascaded Crystallization of GST(Ge2Sb2Te5)  | 
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      The ellipsometric isotherms of cosΔ  clearly show the characteristic cascaded crystallization of GST followed by incubation time(left). The first stage of crystallization is a 3-dimensonal  nucleation dominant one and the second one is an 1-dimensional plate like grain  growth one. The speed of cascaded phase transformation of GST depends on temperature  such that it proceeds fast at high temperature, and it  proceeds slow at lower temperature, but the optical  property change of GST at each stage of crystallization is exactly the same  even at different temperature(right). (Ref. JAP 86(2), 774, 1999) | 
    
    
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            6. Cascaded Crystallization of GST-N(Nitrogen Doped Ge2Sb2Te5)  | 
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      As  concentration of doped Nitrogen into GST increases, the characteristic property  of cascaded phase transition becomes obscured. Nitrogen concentration is 0.0 %, 2.9 %, and 6.8 %,  respectively, from left. | 
    
    
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