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Applications and Technology
Ellipso Technology
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  HOME > 应用 分野/枝术 > Solar Cell
Analysis of Solar Cell Thin Films – A Few Examples (Ref: Ellipso Technology)
 

1. FTO

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2. TCO

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3. CdS

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4. ZnPC

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5. BCP

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6. C60

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7. C70

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8. TAPC

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9. PIN(a-Si)

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10. Poly Si

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11. SiN

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12. SiNx

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13. Al2O3

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14. PTB7_PCBM

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15. Doped ZnO

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16. MoO3

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17. MoS2

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18. Sb2Se3

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1. FTO

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1-1. FTO/SiO2 on Glass

 
FTO (66.2 %) +   void(33.8 %) 49.27 nm
FTO (99.3 %) +   void( 0.7 %)  486.03 nm
SiO2 100 nm
Substrate Glass

2. TCO

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2-1. TCO/SiO2 on Glass

 
TCO (57 %) + void(43 %) 36.10 nm
TCO 847.24 nm
TCO (81 %) + void(19 %)  239.79 nm
SiO2 192.35 nm
Substrate Glass
R.I. Dispersion of TCO
 

3. CdS

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3-1. CdS on Glass

 

Layers (From Top)

   CdS (73.66%) +    void(26.34%) 40.893 nm
   CdS (100%)  72.46 nm
R.I. Dispersion of CdS
Substrate Glass

4. ZnPC

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4-1. ZnPC(350 Å) on Glass

 
Thickness,  ZnPC 47.539 nm
R.I. Dispersion of ZnPC
Substrate Glass
 

4-2. ZnPC(1000 Å) on Glass

 
Thickness,  ZnPC 79.953 nm
R.I. Dispersion of ZnPC
Substrate Glass

5. BCP

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5-1. BCP on c-Si

 
Thickness,  BCP 83.524 nm
R.I. Dispersion of BCP
Substrate Crystalline Silicon

6. C60

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6-1. C60 on c-Si

 
Thickness,  C60 40.381 nm
R.I. Dispersion of C60
Substrate Crystalline Silicon

7. C70

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7-1. C70 on c-Si

 
Thickness,  C70 120.764 nm
R.I. Dispersion of C70
Substrate Crystalline Silicon
 
- Analysis is done to the spectral range of 1.2-3.5 eV.

8. TAPC

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8-1. TAPC on c-Si

 
Thickness,  TAPC 59.058 nm
R.I. Dispersion of TAPC
Substrate Crystalline Silicon

9. PIN(a-Si)

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9. PIN(a-Si) on Glass

 
 
a-Si (80.2 %) + void (19.8 %) 28.68 nm
a-Si (75.4 %) + void (24.6 %) 318.44 nm
a-Si (74.6 %) + void (25.4 %)  49.93 nm
Substrate Glass
 

9-2. PIN(a-Si)/SnO2 on Glass

 
 
a-Si (76.1 %) + void (23.9 %) 28.92 nm
a-Si (74.5 %) + void (25.5 %) 245.38 nm
a-Si (48.6 %) + void (51.4 %) 86.46 nm
SnO2 (83.6 %) + void (16.4 %) 887.13 nm
Substrate Glass

10. Poly Si

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10-1. Poly Si/SiO2 on c-Si

 
 
R.I. Dispersion of Poly
Poly : Thickness = 525.7 nm
SiO2 : Thickness = 30.3 nm

11. SiN

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11-1. SiN on c-Si

 
SiN Thickness 85.86 nm
R.I.(@633 nm) 2.0527
Substrate Crystalline Silicon
 

11-2. SiN/SiO2 on c-Si

 
 
Si3N4 Thickness 219.3 nm
SiO2 Thickness 223.8 nm
Substrate Crystalline Silicon
 

11-3. Si-rich SiN on c-Si

 
Si-rich SiN Film
Composition Si3N4 (85.8 %) + a-Si (14.2 %)
Thickness 51.5 nm
R.I.(@ 633 nm) 2.294,
Extinction Coeff.(@ 633 nm) 0.018
 
R.I Dispersion
 
 

11-4. Low Density SiN on c-Si

 
 
Si3N4  
Density
R.I.(@633 nm)
Thickness
83.0 %
1.840
87.0 nm
Substrate Crystalline Silicon

12. SiNx

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12-1. SiNx on Textured c-Si, SiO2 on Textured c-Si

 
Thickness SiNx : 81.24 nm
Substrate : Crystalline Silicon
R.I Dispersion of SiNx
Thickness SiO2 : 537.89 nm
Substrate : Crystalline Silicon
 

12-2. SiNx on Textured Poly, SiNx on Textured c-Si

 
 
SiNx 89.88 nm SiNx 82.22 nm
SiNx 74.95 nm
R.I.  2.250 R.I. 2.093 R.I. 2.002
Baby Blue Deep Blue Dark Blue
 

Textured poly Silicon (uncoated, left) & SiNx coated one (baby blue, center and right)

Textured poly Silicon (uncoated, lef) & SiNx coated one (deep blue, center and right)

Textured mono-crystalline Silicon (uncoated, left) & SiNx coated one (dark blue, center)

13. Al2O3

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13-1. Low Density Al2O3 on c-Si

 
Al2O3 Thickness 5.58nm
R.I.(@633 nm) 1.507
Substrate Crystalline Silicon

14. PTB7_PCBM

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14-1. PTB7_PCBM on c-Si

 
Thickness,  PTB7_PCBM 232.53 nm
R.I. Dispersion of PTB7_PCBM
Substrate Crystalline Silicon

15. Doped ZnO

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15-1. In Doped ZnO on c-Si

 
Thickness,  In doped ZnO 31.79 nm
R.I. Dispersion of In doped ZnO
Substrate Crystalline Silicon
 
 

15-2. Al Doped ZnO on c-Si

 
Thickness,  Al doped ZnO 32.359 nm
R.I. Dispersion of Al doped ZnO
Substrate Crystalline Silicon
 

15-3. Ga Doped ZnO on c-Si

 
Thickness,  Ga doped ZnO 25.626 nm
R.I. Dispersion of Ga doped ZnO
Substrate Crystalline Silicon
 

15-4. Al Doped ZnO on Glass – Heat Treatment

 
 

16. MoO3

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16-1. MoO3 on c-Si

 

Layers (From Top)

   MoO3(80.0%) + void(20.0%) 8.548 nm
   MoO3(100%) 73.677 nm
R.I. Dispersion of MoO3
Substrate Crystalline Silicon

17. MoS2

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17-1. MoS2/SiO2 on c-Si

 
Thickness : MoS2 66.084 nm
R.I. : Dispersion of MoS2
Substrate : Crystalline Silicon

18. Sb2Se3

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18-1. Sb2Se3 on c-Si

 
Thickness : Sb2Se3 16.934 nm
R.I. : Dispersion of Sb2Se3
Substrate : Crystalline Silicon